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1 m e m o r y all data sheets are subject to change without notice (858) 503-3300- fax: (858) 503-3301 - www.maxwell.com 1 megabit (128k x 8-bit) eeprom 28c010t ?2003 maxwell technologies all rights reserved. 06.03.03 rev 14 f eatures : ? 128k x 8-bit eeprom r ad -p ak ? radiation-hardened against natural space radia- tion total dose hardness: - > 100 krad (si), depending upon space mission excellent single event effects - sel th > 120 mev/mg/cm 2 - seu > 90 mev/mg/cm 2 read mode - seu = 18 mev/mg/cm 2 write mode package: - 32-pin r ad -p ak ? flat pack/dip package - jedec-approved byte-wide pinout high speed: - 120, 150, and 200 ns maximum access times available high endurance: - 10,000 erase/write (in page mode), - 10 year data retention page write mode: - 1 to 128 bytes low power dissipation - 20 mw/mhz active (typical) - 110 w standby (maximum) standard jedec package width d escription : maxwell technologies? 28c010t high-density 1 megabit (128k x 8-bit) eeprom microcircuit features a greater than 100 krad (si) total dose tolerance, depending upon space mis- sion. the 28c010t is capable of in-system electrical byte and page programmability. it has a 128-byte page programming function to make its erase and write operations faster. it also features data polling and a ready/busy signal to indicate the completion of erase and programming operations. in the 28c010t, hardware data protection is provided with the res pin, in addition to noise protection on the we signal and write inhibit on power on and off. software data protection is imple- mented using the jedec optional standard algorithm. maxwell technologies' patented r ad -p ak ? packaging technol- ogy incorporates radiation shielding in the microcircuit pack- age. it eliminates the need for box shielding while providing the required radiation shielding for a lifetime in orbit or space mission. in a geo orbit, r ad -p ak ? provides greater than 100 krad(si) radiation dose tolerance. this product is available with screening up to class s. high voltage generator control logic timing address buffer and latch y decoder x decoder y gating memory array i/o buffer and input latch data latch v cc v ss res oe ce we res a0 a6 a7 a16 i/o0 i/o7 rdy/busy logic diagram
m e m o r y 2 all data sheets are subject to change without notice ?2003 maxwell technologies all rights reserved. 1 megabit (128k x 8-bit) eeprom 28c010t 06.03.03 rev 14 t able 1. 28c010t p inout d escription p in s ymbol d escription 12-5, 27, 26, 23, 25, 4, 28, 3, 31, 2 a0-a16 address 13, 14, 15, 17, 18, 19, 20, 21 i/o0 - i/o7 data i/o 24 oe output enable 22 ce chip enable 29 we write enable 32 v cc power supply 16 v ss ground 1rdy/busy ready/busy 30 res reset t able 2. 28c010t a bsolute m aximum r atings p arameter s ymbol m in t yp m ax u nits supply voltage (relative to v ss )v cc -0.6 +7.0 v input voltage (relative to v ss )v in -0.5 1 1. v in min = -3.0v for pulse width < 50ns. +7.0 v package weight rp 7.4 grams rt 2.7 rd 10.9 thermal impedance (rp and rt packages) f jc 2.4 c/w thermal impedance (dip package) f jc 2.17 c/w operating temperature range t opr -55 +125 c storage temperature range t stg -65 +150 c t able 3. d elta l imits 1 1. parameters are measured and recorded as deltas per mil-std-883 for class s devices p arameter v ariation 2 2. specified in table 6 i cc1 10% i cc2 10% i cc3a 10% i cc3b 10%
m e m o r y 3 all data sheets are subject to change without notice ?2003 maxwell technologies all rights reserved. 1 megabit (128k x 8-bit) eeprom 28c010t 06.03.03 rev 14 t able 4. 28c010t r ecommended o perating c onditions p arameter s ymbol m in m ax u nits supply voltage v cc 4.5 5.5 v input voltage res _pin v il -0.3 1 1. v il min = -1.0v for pulse width < 50 ns 0.8 v v ih 2.2 v cc +0.3 v h v cc -0.5 v cc +1 t able 5. 28c010t c apacitance (t a = 25 c, f = 1 mhz) p arameter s ymbol m in m ax u nits input capacitance: v in = 0v 1 1. guaranteed by design. c in -- 6 pf output capacitance: v out = 0v 1 c out -- 12 pf t able 6. 28c010t dc e lectrical c haracteristics (v cc = 5v 10%, t a = -55 to +125 c, unless otherwise specified ) p arameter t est c ondition s ubgroups s ymbol m in m ax u nits input leakage current v cc = 5.5v, v in = 5.5v 1, 2, 3 i il -- 2 1 1. i li for res = 100ua max. a output leakage current v cc = 5.5v, v out = 5.5v/0.4v 1, 2, 3 i lo -- 2 a standby v cc current ce = v cc 1, 2, 3 i cc1 -- 20 a ce = v ih i cc2 -- 1 ma operating v cc current i out = 0ma, duty = 100%, cycle = 1 s at v cc = 5.5v 1, 2, 3 i cc3a -- 15 ma i out = 0ma, duty = 100%, cycle = 150ns at v cc = 5.5v 1, 2, 3 i cc3b -- 50 input voltage res _pin 1, 2, 3 v il -- 0.8 v v ih 2.2 -- v h v cc -0.5 -- output voltage 2 2. rdy/bsy is an open drain output. only v ol applies to this pin. i ol = 2.1 ma 1, 2, 3 v ol -- 0.4 v i oh = - 0.4 ma v oh 2.4 -- i oh = - 0.1 ma v oh v cc -0.3v
m e m o r y 4 all data sheets are subject to change without notice ?2003 maxwell technologies all rights reserved. 1 megabit (128k x 8-bit) eeprom 28c010t 06.03.03 rev 14 t able 7. 28c010t ac e lectrical c haracteristics for r ead o peration 1 (v cc = 5v + 10%, t a = -55 to +125 c) 1. test conditions: input pulse levels - 0.4v to 2.4v; input rise and fall times < 20ns; output load - 1 ttl gate + 100pf (inclu ding scope and jig); reference levels for measuring timing - 0.8v/1.8v. p arameter s ymbol s ubgroups m in m ax u nits address access time ce = oe = v il , we = v ih -120 -150 -200 t acc 9, 10, 11 -- -- -- 120 150 200 ns chip enable access time oe = v il , we = v ih -120 -150 -200 t ce 9, 10, 11 -- -- -- 120 150 200 ns output enable access time ce = v il , we = v ih -120 -150 -200 t oe 9, 10, 11 0 0 0 75 75 100 ns output hold to address change ce = oe = v il , we = v ih -120 -150 -200 t oh 9, 10, 11 0 0 0 -- -- -- ns output disable to high-z 2 ce = v il , we = v ih -120 -150 -200 ce = oe = v il , we = v ih -120 -150 -200 2. t df and t dfr are defined as the time at which the output becomes an open circuit and data is no longer driven. t df t dfr 9, 10, 11 0 0 0 0 0 0 50 50 60 300 350 450 ns res to output delay 3 ce = oe = v il , we = v ih -120 -150 -200 3. guaranteed by design. t rr 9, 10, 11 -- -- -- 400 450 650 ns
m e m o r y 5 all data sheets are subject to change without notice ?2003 maxwell technologies all rights reserved. 1 megabit (128k x 8-bit) eeprom 28c010t 06.03.03 rev 14 t able 8. 28c010t ac e lectrical c haracteristics for p age /b yte e rase and p age /b yte w rite o perations (v cc = 5v + 10%, t a = -55 to +125 c) p arameter s ymbol s ubgroups m in 1 m ax u nits address setup time -120 -150 -200 t as 9, 10, 11 0 0 0 -- -- -- ns chip enable to write setup time (we controlled) -120 -150 -200 t cs 9, 10, 11 0 0 0 -- -- -- ns write pulse width ce controlled -120 -150 -200 we controlled -120 -150 -200 t cw t wp 9, 10, 11 200 250 350 200 250 350 -- -- -- -- -- -- ns address hold time -120 -150 -200 t ah 9, 10, 11 150 150 200 -- -- -- ns data setup time -120 -150 -200 t ds 9, 10, 11 75 100 150 -- -- -- ns data hold time -120 -150 -200 t dh 9, 10, 11 10 10 10 -- -- -- ns chip enable hold time (we controlled) -120 -150 -2000 t ch 9, 10, 11 0 0 0 -- -- -- ns write enable to write setup time (ce controlled) -120 -150 -200 t ws 9, 10, 11 0 0 0 -- -- -- ns write enable hold time (ce controlled) -120 -150 -200 t wh 9, 10, 11 0 0 0 -- -- -- ns
m e m o r y 6 all data sheets are subject to change without notice ?2003 maxwell technologies all rights reserved. 1 megabit (128k x 8-bit) eeprom 28c010t 06.03.03 rev 14 output enable to write setup time -120 -150 -200 t oes 9, 10, 11 0 0 0 -- -- -- ns output enable hold time -120 -150 -200 t oeh 9, 10, 11 0 0 0 -- -- -- ns write cycle time 2 -120 -150 -200 t wc 9, 10, 11 -- -- -- 10 10 10 ms data latch time -120 -150 -200 t dl 9, 10, 11 250 300 400 -- -- -- ns byte load window -120 -150 -200 t bl 9, 10, 11 100 100 200 -- -- -- s byte load cycle -120 -150 -200 t blc 9, 10, 11 0.55 0.55 0.95 30 30 30 s time to device busy -120 -150 -200 t db 9, 10, 11 100 120 170 -- -- -- ns write start time 3 -120 -150 -200 t dw 9, 10, 11 150 150 250 -- -- -- ns res to write setup time 4 -120 -150 -200 t rp 9, 10, 11 100 100 200 -- -- -- s v cc to res setup time 4 -120 -150 -200 t res 9, 10, 11 1 1 3 -- -- -- s 1. use this device in a longer cycle than this value. t able 8. 28c010t ac e lectrical c haracteristics for p age /b yte e rase and p age /b yte w rite o perations (v cc = 5v + 10%, t a = -55 to +125 c) p arameter s ymbol s ubgroups m in 1 m ax u nits
m e m o r y 7 all data sheets are subject to change without notice ?2003 maxwell technologies all rights reserved. 1 megabit (128k x 8-bit) eeprom 28c010t 06.03.03 rev 14 f igure 1. r ead t iming w aveform 2. t wc must be longer than this value unless polling techniques or rdy/busy are used. this device automatically completes the internal write operation within this value. 3. next read or write operation can be initiated after t dw if polling techniques or rdy/busy are used. 4. guaranteed by design. t able 9. 28c010t m ode s election 1 1. x = don?t care. p arameter ce oe we i/o res rdy/busy read v il v il v ih d out v h high-z standby v ih x x high-z x high-z write v il v ih v il d in v h high-z --> v ol deselect v il v ih v ih high-z v h high-z write inhibit x x v ih -- x -- xv il x--x-- data polling v il v il v ih data out (i/o7) v h v ol program x x x high-z v il high-z
m e m o r y 8 all data sheets are subject to change without notice ?2003 maxwell technologies all rights reserved. 1 megabit (128k x 8-bit) eeprom 28c010t 06.03.03 rev 14 f igure 2. b yte w rite t iming w aveform (1) (we c ontrolled )
m e m o r y 9 all data sheets are subject to change without notice ?2003 maxwell technologies all rights reserved. 1 megabit (128k x 8-bit) eeprom 28c010t 06.03.03 rev 14 f igure 3. b yte w rite t iming w aveform (2) (ce c ontrolled )
m e m o r y 10 all data sheets are subject to change without notice ?2003 maxwell technologies all rights reserved. 1 megabit (128k x 8-bit) eeprom 28c010t 06.03.03 rev 14 f igure 4. p age w rite t iming w aveform (1) (we c ontrolled )
m e m o r y 11 all data sheets are subject to change without notice ?2003 maxwell technologies all rights reserved. 1 megabit (128k x 8-bit) eeprom 28c010t 06.03.03 rev 14 f igure 5. p age w rite t iming w aveform (2) (ce c ontrolled ) f igure 6. d ata p olling t iming w aveform
m e m o r y 12 all data sheets are subject to change without notice ?2003 maxwell technologies all rights reserved. 1 megabit (128k x 8-bit) eeprom 28c010t 06.03.03 rev 14 f igure 7. s oftware d ata p rotection t iming w aveform (1) (e nable s/w p rotection ) f igure 8. s oftware d ata p rotection t iming w aveform (2) (d isable s/w p rotection ) eeprom a pplication n otes this application note describes the programming procedures for the eeprom modules and with details of various techniques to preserve data protection. automatic page write page-mode write feature allows 1 to 128 bytes of data to be written into the eeprom in a single write cycle, and allows the undefined data within 128 bytes to be written corresponding to the undefined address (a0 to a6). loading the first byte of data, the data load window opens 30 s for the second byte. in the same manner each additional byte of data can be loaded within 30 s. in case ce and we are kept high for 100 s after data input, eeprom enters erase and write mode automatically and only the input data are written into the eeprom.
m e m o r y 13 all data sheets are subject to change without notice ?2003 maxwell technologies all rights reserved. 1 megabit (128k x 8-bit) eeprom 28c010t 06.03.03 rev 14 we , ce pin operation during a write cycle, addresses are latched by the falling edge of we or ce , and data is latched by the rising edge of we or ce . data polling data polling function allows the status of the eeprom to be determined. if eeprom is set to read mode during a write cycle, an inversion of the last byte of data to be loaded outputs from i/o 7 to indicate that the eeprom is per- forming a write operation. rdy/busy signal rdy/busy signal also allows a comparison operation to determine the status of the eeprom. the rdy/busy signal has high impedance except in write cycle and is lowered to v ol after the first write signal. at the-end of a write cycle, the rdy/busy signal changes state to high impedance. res signal when res is low, the eeprom cannot be read and programmed. therefore, data can be protected by keeping res low when v cc is switched. res should be high during read and programming because it doesn?t provide a latch function. data protection to protect the data during operation and power on/off, the eeprom has the internal functions described below. 1. data protection against noise of control pins (ce , oe , we ) during operation.
m e m o r y 14 all data sheets are subject to change without notice ?2003 maxwell technologies all rights reserved. 1 megabit (128k x 8-bit) eeprom 28c010t 06.03.03 rev 14 during readout or standby, noise on the control pins may act as a trigger and turn the eeprom to programming mode by mis- take. to prevent this phenomenon, the eeprom has a noise cancellation function that cuts noise if its width is 20ns or less in programming mode. be careful not to allow noise of a width of more than 20ns on the control pins. 2. data protection at v cc on/off when v cc is turned on or off, noise on the control pins generated by external circuits, such as cpus, may turn the eeprom to programming mode by mistake. to prevent this unintentional programming, the eeprom must be kept in unprogrammable state during v cc on/off by using a cpu reset signal to res pin. res should be kept at v ss level when v cc is turned on or off. the eeprom breaks off programming operation when res become low, programming operation doesn?t finish correctly in case that res falls low during programming operation. res should be kept high for 10 ms after the last data input. 3. software data protection t res t rp t wc
m e m o r y 15 all data sheets are subject to change without notice ?2003 maxwell technologies all rights reserved. 1 megabit (128k x 8-bit) eeprom 28c010t 06.03.03 rev 14 the software data protection function is to prevent unintentional programming caused by noise generated by external circuits. in software data protection mode, 3 bytes of data must be input before write data as follows. these bytes can switch the non- protection mode to the protection mode. software data protection mode can be canceled by inputting the following 6 bytes. then, the eeprom turns to the non-protec- tion mode and can write data normally. however, when the data is input in the canceling cycle, the data cannot be written.
m e m o r y 16 all data sheets are subject to change without notice ?2003 maxwell technologies all rights reserved. 1 megabit (128k x 8-bit) eeprom 28c010t 06.03.03 rev 14 note: all dimensions in inches 32 p in d ual i n -l ine p ackage 1 1. standard product screening flow mil-std-883, method 2001, constant acceleration: for this package type constant acceleration is 3000g?s. s ymbol d imension m in n om m ax a -- 0.187 0.225 b 0.016 0.018 0.020 b2 0.045 0.050 0.065 c 0.009 0.010 0.012 d -- 1.600 1.616 e 0.510 0.590 0.610 ea 0.600 bsc ea/2 0.300 bsc e 0.100 bsc l 0.135 0.145 0.155 q 0.015 0.037 0.060 s1 0.005 0.025 -- s2 0.005 -- -- n32
m e m o r y 17 all data sheets are subject to change without notice ?2003 maxwell technologies all rights reserved. 1 megabit (128k x 8-bit) eeprom 28c010t 06.03.03 rev 14 note: all dimensions in inches. 28c010t 32-p in r ad -p ak ? f lat p ackage s ymbol d imension m in n om m ax a 0.121 0.134 0.147 b 0.015 0.017 0.022 c 0.004 0.005 0.009 d -- 0.820 0.830 e 0.472 0.480 0.488 e1 -- -- 0.498 e2 0.304 0.310 -- e3 0.030 0.085 -- e 0.050bsc l 0.355 0.365 0.375 q 0.020 0.035 0.045 s1 0.005 0.027 -- n32 d
m e m o r y 18 all data sheets are subject to change without notice ?2003 maxwell technologies all rights reserved. 1 megabit (128k x 8-bit) eeprom 28c010t 06.03.03 rev 14 28c010t rad-tolerant flat package note: all dimentions in inches s ymbol d imension m in n om m ax a 0.095 0.109 0.125 b 0.015 0.017 0.022 c 0.004 0.005 0.009 d -- 0.820 0.830 e 0.472 0.480 0.488 e1 -- -- 0.498 e2 0.350 0.365 -- e3 0.030 0.085 -- e 0.050bsc l 0.355 0.365 0.375 q 0.020 0.035 0.045 s1 0.005 0.027 -- n32 d
m e m o r y 19 all data sheets are subject to change without notice ?2003 maxwell technologies all rights reserved. 1 megabit (128k x 8-bit) eeprom 28c010t 06.03.03 rev 14 important notice: these data sheets are created using the chip manufacturers published specifications. maxwell technologies verifies functionality by testing key parameters either by 100% testing, sample testing or characterization. the specifications presented within these data sheets represent the latest and most accurate information available to date. however, these specifications are subject to change without notice and maxwell technologies assumes no responsibility for the use of this information. maxwell technologies? products are not authorized for use as critical components in life support devices or systems without express written approval from maxwell technologies. any claim against maxwell technologies must be made within 90 days from the date of shipment from maxwell tech- nologies. maxwell technologies? liability shall be limited to replacement of defective parts.

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